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D MMBZ5233B P6KE33C BZX84C2V7 SMAJ90C P4KE20 ZMM55-A11 P6KE120CA HA13G DF10G SF11LG KBPC802G ZMM55-B33 1N978C 1N4743A 1N5521 KBP206G KBU606 P4KE27C S1M 3EZ82D4 1N987D P4KE170C SMAJ90A 3EZ9.1D2 3EZ11D4 SMBJ7.0A 1N987C

JGD 데이터 시트 카탈로그-61

부품번호제조사응용 프로그램
1N970A JGD0.5W, silicon zener diode. Zener voltage 24V. Test current 5.2mA. +-10% tolerance.
3EZ18D JGD3 W, silicon zener diode. Nominal voltage 18 V, current 42 mA, +-20% tolerance.
1N5955D JGD1.5 W, silicon zener diode. Zener voltage 180 V. Test current 2.1 mA. +-1% tolerance.
MMBZ5233B JGDSurface mount zener diode. Nominal zener voltage 6.0V, test current 20.0mA.
P6KE33C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 33 V. Bidirectional.
BZX84C2V7 JGD350mW zener diode, 2.7V
SMAJ90C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 90 V. Bidirectional.
P4KE20 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 20 V.
ZMM55-A11 JGDSurface mount zener diode, 500mW. Nominal zener voltage 10.4-11.6 V. Test current 5 mA. +-1% tolerance.
P6KE120CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 120 V. Bidirectional.
HA13G JGD1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 200V.
DF10G JGDSingle phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 1000 V.
SF11LG JGDGlass passivated super fast rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current 1.0 A.
KBPC802G JGDSingle phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 200V.
ZMM55-B33 JGDSurface mount zener diode, 500mW. Nominal zener voltage 31-35 V. Test current 5 mA. +-2% tolerance.
1N978C JGD0.5W, silicon zener diode. Zener voltage 51V. Test current 2.5mA. +-2% tolerance.
1N4743A JGD1W zener diode. Zener voltage 13V.
1N5521 JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 4.3 V. Test current 20 mAdc. +-20% tolerance.
KBP206G JGDSingle-phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 600V.
KBU606 JGDSingle phase 6.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 600V.
P4KE27C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 27 V. Bidirectional.
S1M JGDSurface mount rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current 1.0 A.
3EZ82D4 JGD3 W, silicon zener diode. Nominal voltage 82 V, current 9.1 mA, +-4% tolerance.
1N987D JGD0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. +-1% tolerance.
P4KE170C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 170 V. Bidirectional.
SMAJ90A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 90 V.
3EZ9.1D2 JGD3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-2% tolerance.
3EZ11D4 JGD3 W, silicon zener diode. Nominal voltage 11 V, current 68 mA, +-4% tolerance.
SMBJ7.0A JGDSurface mount transient voltage suppressor. Breakdown voltage 7.78 V (min), 8.60 V (max). Test current 10.0 mA.
1N987C JGD0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. +-2% tolerance.

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