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55B ES1C FR202 W04M ZMM5249D SMAJ170 3EZ11D 1N4620D SFR204 1N958B P4KE120C P6KE350C SMBJ5922D SMBJ5943A 1N5956C SMBJ8.0 P6KE36CA ZMM55-B3V9 SMAJ17 P6KE110C KBU806 KBL410 3EZ3.9D5 SMBJ100A 1N961C 3EZ22D3 SMAJ16C 3EZ82D

JGD 데이터 시트 카탈로그-75

부품번호제조사응용 프로그램
KBP210 JGDSingle-phase 2.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000V.
1N5919 JGD1.5 W, silicon zener diode. Zener voltage 5.6V. Test current 66.9 mA. +-20% tolerance.
SMBJ5955B JGD1.5W silicon surface mount zener diode. Zener voltage 180 V. Test current 2.1 mA. +-5% tolerance.
ES1C JGD1.0 A super fast recovery silicon rectifier. Max recurrent peak reverse voltage 150 V.
FR202 JGD2.0A, fast recovery rectifier. Max recurrent peak reverse voltage 100V.
W04M JGDSingle phase silicon bridge rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 1.5 A.
ZMM5249D JGDSurface mount zener diode. Nominal zener voltage 19 V. Test current 6.6 mA. +-20% tolerance.
SMAJ170 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 170 V.
3EZ11D JGD3 W, silicon zener diode. Nominal voltage 11 V, current 68 mA, +-20% tolerance.
1N4620D JGD500mW low noise silicon zener diode. Nominal zener voltage 3.3V. 1% tolerance.
SFR204 JGDSoft fast recovery rectifier. Max recurrent peak reverse voltage 400 V. Max average forward current 2.0 A.
1N958B JGD0.5W, silicon zener diode. Zener voltage 7.5V. Test current 16.5mA. +-5% tolerance.
P4KE120C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 120 V. Bidirectional.
P6KE350C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 350 V. Bidirectional.
SMBJ5922D JGD1.5W silicon surface mount zener diode. Zener voltage 7.5 V. Test current 50.0 mA. +-1% tolerance.
SMBJ5943A JGD1.5W silicon surface mount zener diode. Zener voltage 56 V. Test current 6.7 mA. +-10% tolerance.
1N5956C JGD1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-2% tolerance.
SMBJ8.0 JGDSurface mount transient voltage suppressor. Breakdown voltage 8.89 V (min), 10.9 V (max). Test current 1.0 mA.
P6KE36CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 36 V. Bidirectional.
ZMM55-B3V9 JGDSurface mount zener diode, 500mW. Nominal zener voltage 3.7-4.1 V. Test current 5 mA. +-2% tolerance.
SMAJ17 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 17 V.
P6KE110C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 110 V. Bidirectional.
KBU806 JGDSingle phase 8.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 600V.
KBL410 JGDSingle-phase 4.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000V.
3EZ3.9D5 JGD3 W, silicon zener diode. Nominal voltage 3.9V, current 192mA, +-5% tolerance.
SMBJ100A JGDSurface mount transient voltage suppressor. Breakdown voltage 111 V (min), 123 V (max). Test current 1.0 mA.
1N961C JGD0.5W, silicon zener diode. Zener voltage 10V. Test current 12.5mA. +-2% tolerance.
3EZ22D3 JGD3 W, silicon zener diode. Nominal voltage 22 V, current 34 mA, +-3% tolerance.
SMAJ16C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 16 V. Bidirectional.
3EZ82D JGD3 W, silicon zener diode. Nominal voltage 82 V, current 9.1 mA, +-20% tolerance.

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