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520C 1N5404G SMAJ36CA GS1D SMAJ12C SMBJ5924A LS4148 1N4758A BY550-1000 1N990 SMAJ60 P4KE9.1 KBU610G EM516 P6KE56A 1N961D 3EZ27D 1N5927D SMAJ48C RC208 HER605G SMAJ160CA SFR202 FS1J SF63 1N4124 1N5534D SMBJ5945D

JGD 데이터 시트 카탈로그-51

부품번호제조사응용 프로그램
P4KE100A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 100 V.
UF5402G JGDGlass passivated ultra fast rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 3.0 A.
1N5520C JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 3.9 V. Test current 20 mAdc. +-2% tolerance.
1N5404G JGD3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V.
SMAJ36CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 36 V. Bidirectional.
GS1D JGD1.0A, surface mount rectifier. Max recurrent peak reverse voltage 200V.
SMAJ12C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 12 V. Bidirectional.
SMBJ5924A JGD1.5W silicon surface mount zener diode. Zener voltage 9.1 V. Test current 41.2 mA. +-10% tolerance.
LS4148 JGDSurface mount switching diode. Peak reverse voltage 100V. Rectified current 150mA.
1N4758A JGD1W zener diode. Zener voltage 56V.
BY550-1000 JGD5.0 A silicon rectifier. Max recurrent peak reverse voltage 1000 V.
1N990 JGD0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. +-20% tolerance.
SMAJ60 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 60 V.
P4KE9.1 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 9.1 V.
KBU610G JGDSingle phase 6.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 1000V.
EM516 JGD0.5 A silicon rectifier. Max recurrent peak reverse voltage 1800 V.
P6KE56A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 56 V.
1N961D JGD0.5W, silicon zener diode. Zener voltage 10V. Test current 12.5mA. +-1% tolerance.
3EZ27D JGD3 W, silicon zener diode. Nominal voltage 27 V, current 28 mA, +-20% tolerance.
1N5927D JGD1.5 W, silicon zener diode. Zener voltage 12V. Test current 31.2 mA. +-1% tolerance.
SMAJ48C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 48 V. Bidirectional.
RC208 JGDSingle phase 2 A. Single bridge rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 2 A.
HER605G JGD6.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 400V.
SMAJ160CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 160 V. Bidirectional.
SFR202 JGDSoft fast recovery rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 2.0 A.
FS1J JGD1.0A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 600V.
SF63 JGDSuper fast rectifier. Max recurrent peak reverse voltage 150 V. Max average forward current 6.0 A.
1N4124 JGD500mW low noise silicon zener diode. Nominal zener voltage 43V.
1N5534D JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 14.0 V. Test current 1.0 mAdc. +-1% tolerance.
SMBJ5945D JGD1.5W silicon surface mount zener diode. Zener voltage 68 V. Test current 5.5 mA. +-1% tolerance.

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