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533A ZMM5233B KBP208 3EZ16D5 KBPC304 HER157G P6KE350A SMBJ90 SMAJ13A SMAJ43A SMAJ40CA 6A10G 3EZ100D1 SMBJ5949B SMAJ14C 3EZ22D2 SMAJ24 GS1G SMAJ17CA 1N749A 1N4372 SS15 1N5541D SMAJ8.0C 3EZ22D1 KBU604 SMBJ5921C SF12G

JGD 데이터 시트 카탈로그-58

부품번호제조사응용 프로그램
1N4763D JGD1W zener diode. Nominal zener voltage 91V. 1% tolerance.
ZMM5244B JGDSurface mount zener diode. Nominal zener voltage 14 V. Test current 9.0 mA. +-5% tolerance.
1N5533A JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 13.0 V. Test current 1.0 mAdc. +-10% tolerance.
ZMM5233B JGDSurface mount zener diode. Nominal zener voltage 6.0 V. Test current 20 mA. +-5% tolerance.
KBP208 JGDSingle-phase 2.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 800V.
3EZ16D5 JGD3 W, silicon zener diode. Nominal voltage 16 V, current 47 mA, +-5% tolerance.
KBPC304 JGDSingle phase 3.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 400V.
HER157G JGD1.5 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 800V.
P6KE350A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 350 V.
SMBJ90 JGDSurface mount transient voltage suppressor. Breakdown voltage 100 V (min), 122 V (max). Test current 1.0 mA.
SMAJ13A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 13 V.
SMAJ43A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 43 V.
SMAJ40CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 40 V. Bidirectional.
6A10G JGD6.0 A glass passivated rectifier. Max recurrent peak reverse voltage 1000 V.
3EZ100D1 JGD3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-1% tolerance.
SMBJ5949B JGD1.5W silicon surface mount zener diode. Zener voltage 100 V. Test current 3.7 mA. +-5% tolerance.
SMAJ14C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 14 V. Bidirectional.
3EZ22D2 JGD3 W, silicon zener diode. Nominal voltage 22 V, current 34 mA, +-2% tolerance.
SMAJ24 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 24 V.
GS1G JGD1.0A, surface mount rectifier. Max recurrent peak reverse voltage 400V.
SMAJ17CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 17 V. Bidirectional.
1N749A JGD500mW, silicon zener diode. Zener voltage 4.3 V. Test current 20 mA. +-5% tolerance.
1N4372 JGD500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. +-10% standard tolerance.
SS15 JGDSurface mount schottky barrier rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 1.0 A.
1N5541D JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 22.0 V. Test current 1.0 mAdc. +-1% tolerance.
SMAJ8.0C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 8.0 V. Bidirectional.
3EZ22D1 JGD3 W, silicon zener diode. Nominal voltage 22 V, current 34 mA, +-1% tolerance.
KBU604 JGDSingle phase 6.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 400V.
SMBJ5921C JGD1.5W silicon surface mount zener diode. Zener voltage 6.8 V. Test current 55.1 mA. +-2% tolerance.
SF12G JGDGlass passivated super fast rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 1.0 A.

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