3EZ11D4 사양 : 3 W, silicon zener diode. Nominal voltage 11 V, current 68 mA, +-4% tolerance.

3EZ11D4 유사

3EZ100D
- 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-20% tolerance.
3EZ100D1
- 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-1% tolerance.
3EZ100D10
- 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-10% tolerance.
3EZ100D2
- 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-2% tolerance.
3EZ100D3
- 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-3% tolerance.
3EZ100D4
- 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-4% tolerance.
3EZ100D5
- 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-5% tolerance.
3EZ10D1
- 3 W, silicon zener diode. Nominal voltage 10 V, current 75 mA, +-1% tolerance.

3EZ11D4 Datasheet 및 사양

제조사 : JGD

포장 :

팡 : 2

온도 : 분 -65 °C | 맥스 175 °C

파일크기 : 160 KB

응용 프로그램 : 3 W, silicon zener diode. Nominal voltage 11 V, current 68 mA, +-4% tolerance.