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9A HER106G 3EZ24D 1N4731D 1N967A SMBJ5955C 3EZ22D5 FR207G 1A4 FS2J 1N4123D 3EZ82D3 3EZ170D2 FR106L 1N964 SMAJ58C S3D ZMM55-C7V5 1N758C SMAJ14A ZMM55-A18 P4KE300 1N968 SMBJ5934C DF005G SMBJ70CA SMAJ110C KBPC810

JGD 데이터 시트 카탈로그-63

부품번호제조사응용 프로그램
2W10 JGDSingle phase 2.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000 V.
ZMM55-D10 JGDSurface mount zener diode, 500mW. Nominal zener voltage 9.4-10.6 V. Test current 5 mA. +-20% tolerance.
1N5519A JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-10% tolerance.
HER106G JGD1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 600V.
3EZ24D JGD3 W, silicon zener diode. Nominal voltage 24 V, current 31 mA, +-20% tolerance.
1N4731D JGD1W zener diode. Nominal zener voltage 4.3V. 1% tolerance.
1N967A JGD0.5W, silicon zener diode. Zener voltage 18V. Test current 7.0mA. +-10% tolerance.
SMBJ5955C JGD1.5W silicon surface mount zener diode. Zener voltage 180 V. Test current 2.1 mA. +-2% tolerance.
3EZ22D5 JGD3 W, silicon zener diode. Nominal voltage 22 V, current 34 mA, +-5% tolerance.
FR207G JGD2.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 1000V.
1A4 JGD1.0 A silicon rectifier. Max recurrent peak reverse voltage 400 V.
FS2J JGD1.5A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 600V.
1N4123D JGD500mW low noise silicon zener diode. Nominal zener voltage 39V. 1% tolerance.
3EZ82D3 JGD3 W, silicon zener diode. Nominal voltage 82 V, current 9.1 mA, +-3% tolerance.
3EZ170D2 JGD3 W, silicon zener diode. Nominal voltage 170 V, current 4.4 mA, +-2% tolerance.
FR106L JGD1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 800V.
1N964 JGD0.5W, silicon zener diode. Zener voltage 13V. Test current 9.5mA. +-20% tolerance.
SMAJ58C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 58 V. Bidirectional.
S3D JGDSurface mount rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 3.0 A.
ZMM55-C7V5 JGDSurface mount zener diode, 500mW. Nominal zener voltage 7.0-7.9 V. Test current 5 mA. +-5% tolerance.
1N758C JGD500mW, silicon zener diode. Zener voltage 10 V. Test current 20 mA. +-2% tolerance.
SMAJ14A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 14 V.
ZMM55-A18 JGDSurface mount zener diode, 500mW. Nominal zener voltage 16.8-19.1 V. Test current 5 mA. +-1% tolerance.
P4KE300 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 300 V.
1N968 JGD0.5W, silicon zener diode. Zener voltage 20V. Test current 6.2mA. +-20% tolerance.
SMBJ5934C JGD1.5W silicon surface mount zener diode. Zener voltage 24 V. Test current 15.6 mA. +-2% tolerance.
DF005G JGDSingle phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50 V.
SMBJ70CA JGDSurface mount transient voltage suppressor. Breakdown voltage 77.6 V (min), 86.0 V (max). Test current 1.0 mA. Bidirectional.
SMAJ110C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 110 V. Bidirectional.
KBPC810 JGDSingle phase 8.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000V.

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