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6C HER103L UF5404G 1N988 1N4626C 2W01 1N4130C 1N758 S1G SMAJ48CA FS1K 3EZ68D10 SMAJ170A SMBJ5935B 1N4751C FR155 1N4370D 1N5536A SMBJ5940 3EZ160D10 SS14 1N974C P4KE9.1A 3EZ62D3 1N5544B SMBJ5948B SMBJ5946A P6KE47

JGD 데이터 시트 카탈로그-59

부품번호제조사응용 프로그램
1N4754C JGD1W zener diode. Nominal zener voltage 39V. 2% tolerance.
FR101G JGD1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 50V.
SMBJ36C JGDSurface mount transient voltage suppressor. Breakdown voltage 40.0 V (min), 48.9 V (max). Test current 1.0 mA. Bidirectional.
HER103L JGD1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 200V.
UF5404G JGDGlass passivated ultra fast rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 3.0 A.
1N988 JGD0.5W, silicon zener diode. Zener voltage 130V. Test current 0.95mA. +-20% tolerance.
1N4626C JGD500mW low noise silicon zener diode. Nominal zener voltage 5.6V. 2% tolerance.
2W01 JGDSingle phase 2.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 100 V.
1N4130C JGD500mW low noise silicon zener diode. Nominal zener voltage 68V. 2% tolerance.
1N758 JGD500mW, silicon zener diode. Zener voltage 10 V. Test current 20 mA. +-10% standard tolerance.
S1G JGDSurface mount rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 1.0 A.
SMAJ48CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 48 V. Bidirectional.
FS1K JGD1.0A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 800V.
3EZ68D10 JGD3 W, silicon zener diode. Nominal voltage 68 V, current 11 mA, +-10% tolerance.
SMAJ170A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 170 V.
SMBJ5935B JGD1.5W silicon surface mount zener diode. Zener voltage 27 V. Test current 13.9 mA. +-5% tolerance.
1N4751C JGD1W zener diode. Nominal zener voltage 30V. 2% tolerance.
FR155 JGD1.5A, fast recovery rectifier. Max recurrent peak reverse voltage 600V.
1N4370D JGD500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-1% tolerance.
1N5536A JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-10% tolerance.
SMBJ5940 JGD1.5W silicon surface mount zener diode. Zener voltage 43 V. Test current 8.7 mA. +-20% tolerance.
3EZ160D10 JGD3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-10% tolerance.
SS14 JGDSurface mount schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward rectified current 1.0 A.
1N974C JGD0.5W, silicon zener diode. Zener voltage 36V. Test current 3.4mA. +-2% tolerance.
P4KE9.1A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 9.1 V.
3EZ62D3 JGD3 W, silicon zener diode. Nominal voltage 62 V, current 12 mA, +-3% tolerance.
1N5544B JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 28.0 V. Test current 1.0 mAdc. +-5% tolerance.
SMBJ5948B JGD1.5W silicon surface mount zener diode. Zener voltage 91 V. Test current 4.1 mA. +-5% tolerance.
SMBJ5946A JGD1.5W silicon surface mount zener diode. Zener voltage 75 V. Test current 5.0 mA. +-10% tolerance.
P6KE47 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 47 V.

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