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113D ZMM5245B 1N4131C P4KE400C 1N4115D 1N5931D SMBJ5940C 6A2 3EZ120D3 SMBJ22 SMAJ45 P4KE120CA SMBJ15CA ZMM5261D P4KE91CA 1N5923D SMAJ36C HER104G 1N756C KBJ608G KBP204G SMAJ10CA SMBJ43A SMBJ9.0A SF11G ZMM5227D 1N759

JGD 데이터 시트 카탈로그-69

부품번호제조사응용 프로그램
1A7 JGD1.0 A silicon rectifier. Max recurrent peak reverse voltage 1000 V.
F1A1 JGD1.0 A fast recovery rectifier. Max recurrent peak reverse voltage 50 V.
HER604G JGD6.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 300V.
1N4113D JGD500mW low noise silicon zener diode. Nominal zener voltage 19V. 1% tolerance.
ZMM5245B JGDSurface mount zener diode. Nominal zener voltage 15 V. Test current 8.5 mA. +-5% tolerance.
1N4131C JGD500mW low noise silicon zener diode. Nominal zener voltage 75V. 2% tolerance.
P4KE400C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 400 V. Bidirectional.
1N4115D JGD500mW low noise silicon zener diode. Nominal zener voltage 22V. 1% tolerance.
1N5931D JGD1.5 W, silicon zener diode. Zener voltage 18V. Test current 20.8 mA. +-1% tolerance.
SMBJ5940C JGD1.5W silicon surface mount zener diode. Zener voltage 43 V. Test current 8.7 mA. +-2% tolerance.
6A2 JGD6.0 A silicon rectifier. Max recurrent peak reverse voltage 200 V.
3EZ120D3 JGD3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, +-3% tolerance.
SMBJ22 JGDSurface mount transient voltage suppressor. Breakdown voltage 24.4 V (min), 29.8 V (max). Test current 1.0 mA.
SMAJ45 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 45 V.
P4KE120CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 120 V. Bidirectional.
SMBJ15CA JGDSurface mount transient voltage suppressor. Breakdown voltage 16.7 V (min), 18.5 V (max). Test current 1.0 mA. Bidirectional.
ZMM5261D JGDSurface mount zener diode. Nominal zener voltage 47 V. Test current 2.7 mA. +-20% tolerance.
P4KE91CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 91 V. Bidirectional.
1N5923D JGD1.5 W, silicon zener diode. Zener voltage 8.2V. Test current 45.7 mA. +-1% tolerance.
SMAJ36C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 36 V. Bidirectional.
HER104G JGD1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 300V.
1N756C JGD500mW, silicon zener diode. Zener voltage 8.2 V. Test current 20 mA. +-2% tolerance.
KBJ608G JGDGlass passivated single-phase bridge rectifier. Current 6.0 A. Max recurrent peak reverse voltage 800V.
KBP204G JGDSingle-phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 400V.
SMAJ10CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 10 V. Bidirectional.
SMBJ43A JGDSurface mount transient voltage suppressor. Breakdown voltage 47.8 V (min), 52.8 V (max). Test current 1.0 mA.
SMBJ9.0A JGDSurface mount transient voltage suppressor. Breakdown voltage 10.0 V (min), 11.1 V (max). Test current 1.0 mA.
SF11G JGDGlass passivated super fast rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current 1.0 A.
ZMM5227D JGDSurface mount zener diode. Nominal zener voltage 3.6 V. Test current 20 mA. +-20% tolerance.
1N759 JGD500mW, silicon zener diode. Zener voltage 12 V. Test current 20 mA. +-10% standard tolerance.

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