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1 SMBJ5930B SMBJ45A 3EZ180D3 FS1J FR104G 1N957C KBPC302 1N5544C FR607G SMBJ5933A SMAJ60A 1N5522A P6KE12C HER303G 3EZ39D1 BB814 1N5941B P4KE51C 3EZ9.1D10 P6KE150 1N4622D 1N991C HER203G SMBJ12A 1N4760 UF4003 P6KE33

JGD 데이터 시트 카탈로그-82

부품번호제조사응용 프로그램
KBP204G JGDSingle-phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 400V.
KBU602 JGDSingle phase 6.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 200V.
MDB051 JGDSingle phase 0.5 A glass passivated bridge rectifier. Repetitive peak reverse voltage 100V.
SMBJ5930B JGD1.5W silicon surface mount zener diode. Zener voltage 16 V. Test current 23.4 mA. +-5% tolerance.
SMBJ45A JGDSurface mount transient voltage suppressor. Breakdown voltage 50.0 V (min), 55.3 V (max). Test current 1.0 mA.
3EZ180D3 JGD3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-3% tolerance.
FS1J JGD1.0A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 600V.
FR104G JGD1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 400V.
1N957C JGD0.5W, silicon zener diode. Zener voltage 6.8V. Test current 18.5mA. +-2% tolerance.
KBPC302 JGDSingle phase 3.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 200V.
1N5544C JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 28.0 V. Test current 1.0 mAdc. +-2% tolerance.
FR607G JGD6.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 1000V.
SMBJ5933A JGD1.5W silicon surface mount zener diode. Zener voltage 22 V. Test current 17.0 mA. +-10% tolerance.
SMAJ60A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 60 V.
1N5522A JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 4.7 V. Test current 10 mAdc. +-10% tolerance.
P6KE12C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 12 V. Bidirectional.
HER303G JGD3.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 200V.
3EZ39D1 JGD3 W, silicon zener diode. Nominal voltage 39 V, current 19 mA, +-1% tolerance.
BB814 JGDSurface mount switching diode.
1N5941B JGD1.5 W, silicon zener diode. Zener voltage 47 V. Test current 8.0 mA. +-5% tolerance.
P4KE51C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 51 V. Bidirectional.
3EZ9.1D10 JGD3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-10% tolerance.
P6KE150 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 150 V.
1N4622D JGD500mW low noise silicon zener diode. Nominal zener voltage 3.9V. 1% tolerance.
1N991C JGD0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. +-2% tolerance.
HER203G JGD2.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 200V.
SMBJ12A JGDSurface mount transient voltage suppressor. Breakdown voltage 13.3 V (min), 14.7 V (max). Test current 1.0 mA.
1N4760 JGD1W zener diode. Nominal zener voltage 68V. 10% tolerance.
UF4003 JGDUltra fast rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 1.0 A.
P6KE33 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 33 V.

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