경로 :okDatasheet > 반도체업체순위 > JGD Datasheet > JGD-79

.9D5 P6KE12A 1N961B 1N5929 ZMM55-B5V6 1N5922A SF14LG HA12G 1N4135D HA15 P6KE30A 1N4618 1N975C 3EZ28D5 SMAJ54A ZMM55-D22 F1A2 P4KE82C MMBZ5228B 1N971B 1N5539B P6KE82 KBU610 P6KE200 SMBJ5913 1N981C HER158 SMAJ18A

JGD 데이터 시트 카탈로그-79

부품번호제조사응용 프로그램
1EZ110D5 JGD1 watt silicon zener diode. Nominal zener voltage 110V at 2.3mA.
1N4737 JGD1W zener diode. Nominal zener voltage 7.5V. 10% tolerance.
3EZ3.9D5 JGD3 W, silicon zener diode. Nominal voltage 3.9V, current 192mA, +-5% tolerance.
P6KE12A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 12 V.
1N961B JGD0.5W, silicon zener diode. Zener voltage 10V. Test current 12.5mA. +-5% tolerance.
1N5929 JGD1.5 W, silicon zener diode. Zener voltage 15V. Test current 25 mA. +-20% tolerance.
ZMM55-B5V6 JGDSurface mount zener diode, 500mW. Nominal zener voltage 5.2-6.0 V. Test current 5 mA. +-2% tolerance.
1N5922A JGD1.5 W, silicon zener diode. Zener voltage 7.5V. Test current 50 mA. +-10% tolerance.
SF14LG JGDGlass passivated super fast rectifier. Max recurrent peak reverse voltage 200 V. Max average forward current 1.0 A.
HA12G JGD1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 100V.
1N4135D JGD500mW low noise silicon zener diode. Nominal zener voltage 100V. 1% tolerance.
HA15 JGD1.0A, high efficiency rectifier. Max recurrent peak reverse voltage 400V.
P6KE30A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 30 V.
1N4618 JGD500mW low noise silicon zener diode. Nominal zener voltage 2.7V.
1N975C JGD0.5W, silicon zener diode. Zener voltage 39V. Test current 3.2mA. +-2% tolerance.
3EZ28D5 JGD3 W, silicon zener diode. Nominal voltage 28 V, current 27 mA, +-5% tolerance.
SMAJ54A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 54 V.
ZMM55-D22 JGDSurface mount zener diode, 500mW. Nominal zener voltage 20.8-23.3 V. Test current 5 mA. +-20% tolerance.
F1A2 JGD1.0 A fast recovery rectifier. Max recurrent peak reverse voltage 100 V.
P4KE82C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 82 V. Bidirectional.
MMBZ5228B JGDSurface mount zener diode. Nominal zener voltage 3.9V, test current 20.0mA.
1N971B JGD0.5W, silicon zener diode. Zener voltage 27V. Test current 4.6mA. +-5% tolerance.
1N5539B JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 19.0 V. Test current 1.0 mAdc. +-5% tolerance.
P6KE82 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 82 V.
KBU610 JGDSingle phase 6.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000V.
P6KE200 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 200 V.
SMBJ5913 JGD1.5W silicon surface mount zener diode. Zener voltage 3.3 V. Test current 113.6 mA. +-20% tolerance.
1N981C JGD0.5W, silicon zener diode. Zener voltage 68V. Test current 1.8mA. +-2% tolerance.
HER158 JGD1.5 A, high efficiency rectifier. Max recurrent peak reverse voltage 1000V.
SMAJ18A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 18 V.

<< 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 >>