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30D10 1N4126D W08M FR156 BZX84C10 1N5522B 1N957B 1N5943A BZX84C15 1N5523B 1EZ190D5 P6KE68C SMBJ5955D 1N5920C FR307 KBP200 SMBJ130C MMBZ5231B 3EZ13D2 3EZ4.7D3 1N5947 ZMM55-A43 KBPC1010G 3EZ190D1 1N5922D SMBJ58CA 3EZ7.5D3 KBPC300G

JGD 데이터 시트 카탈로그-100

부품번호제조사응용 프로그램
SMAJ40CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 40 V. Bidirectional.
SMAJ40A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 40 V.
3EZ30D10 JGD3 W, silicon zener diode. Nominal voltage 30 V, current 25 mA, +-10% tolerance.
1N4126D JGD500mW low noise silicon zener diode. Nominal zener voltage 51V. 1% tolerance.
W08M JGDSingle phase silicon bridge rectifier. Max recurrent peak reverse voltage 800 V. Max average forward rectified current 1.5 A.
FR156 JGD1.5A, fast recovery rectifier. Max recurrent peak reverse voltage 800V.
BZX84C10 JGD350mW zener diode, 10V
1N5522B JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 4.7 V. Test current 10 mAdc. +-5% tolerance.
1N957B JGD0.5W, silicon zener diode. Zener voltage 6.8V. Test current 18.5mA. +-5% tolerance.
1N5943A JGD1.5 W, silicon zener diode. Zener voltage 56 V. Test current 6.7 mA. +-10% tolerance.
BZX84C15 JGD350mW zener diode, 15V
1N5523B JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 5.1 V. Test current 5.0 mAdc. +-5% tolerance.
1EZ190D5 JGD1 watt silicon zener diode. Nominal zener voltage 190V at 1.3mA.
P6KE68C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 68 V. Bidirectional.
SMBJ5955D JGD1.5W silicon surface mount zener diode. Zener voltage 180 V. Test current 2.1 mA. +-1% tolerance.
1N5920C JGD1.5 W, silicon zener diode. Zener voltage 6.2V. Test current 60.5 mA. +-2% tolerance.
FR307 JGD3.0A, fast recovery rectifier. Max recurrent peak reverse voltage 1000V.
KBP200 JGDSingle-phase 2.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 50V.
SMBJ130C JGDSurface mount transient voltage suppressor. Breakdown voltage 144 V (min), 176 V (max). Test current 1.0 mA. Bidirectional.
MMBZ5231B JGDSurface mount zener diode. Nominal zener voltage 5.1V, test current 20.0mA.
3EZ13D2 JGD3 W, silicon zener diode. Nominal voltage 13 V, current 58 mA, +-2% tolerance.
3EZ4.7D3 JGD3 W, silicon zener diode. Nominal voltage 4.7V, current 160mA, +-3% tolerance.
1N5947 JGD1.5 W, silicon zener diode. Zener voltage 82 V. Test current 4.6 mA. +-20% tolerance.
ZMM55-A43 JGDSurface mount zener diode, 500mW. Nominal zener voltage 40-46 V. Test current 2.5 mA. +-1% tolerance.
KBPC1010G JGDSingle phase 10.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 1000V.
3EZ190D1 JGD3 W, silicon zener diode. Nominal voltage 190 V, current 4.0 mA, +-1% tolerance.
1N5922D JGD1.5 W, silicon zener diode. Zener voltage 7.5V. Test current 50 mA. +-1% tolerance.
SMBJ58CA JGDSurface mount transient voltage suppressor. Breakdown voltage 64.4 V (min), 71.2 V (max). Test current 1.0 mA. Bidirectional.
3EZ7.5D3 JGD3 W, silicon zener diode. Nominal voltage 7.5 V, current 100 mA, +-3% tolerance.
KBPC300G JGDSingle phase 3.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50V.

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