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D3 1N5545A 1N5520B 1N990A 1N4728A KBPC604G W06M 1N4762D 1N747A FS1M 1N967 1A5 1N976B 1N984A 1N4743C 3EZ4.7D 1N4370A KBPC310 3EZ150D4 1N4135C 3EZ91D3 HER156G SMAJ70 3EZ9.1D1 SMBJ17CA HER107G 1N986A SR760

JGD 데이터 시트 카탈로그-83

부품번호제조사응용 프로그램
1N4126 JGD500mW low noise silicon zener diode. Nominal zener voltage 51V.
P4KE16 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 16 V.
3EZ140D3 JGD3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, +-3% tolerance.
1N5545A JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 30.0 V. Test current 1.0 mAdc. +-10% tolerance.
1N5520B JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 3.9 V. Test current 20 mAdc. +-5% tolerance.
1N990A JGD0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. +-10% tolerance.
1N4728A JGD1W zener diode. Zener voltage 3.3V.
KBPC604G JGDSingle phase 6.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 400V.
W06M JGDSingle phase silicon bridge rectifier. Max recurrent peak reverse voltage 600 V. Max average forward rectified current 1.5 A.
1N4762D JGD1W zener diode. Nominal zener voltage 82V. 1% tolerance.
1N747A JGD500mW, silicon zener diode. Zener voltage 3.6 V. Test current 20 mA. +-5% tolerance.
FS1M JGD1.0A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 1000V.
1N967 JGD0.5W, silicon zener diode. Zener voltage 18V. Test current 7.0mA. +-20% tolerance.
1A5 JGD1.0 A silicon rectifier. Max recurrent peak reverse voltage 600 V.
1N976B JGD0.5W, silicon zener diode. Zener voltage 43V. Test current 3.0mA. +-5% tolerance.
1N984A JGD0.5W, silicon zener diode. Zener voltage 91V. Test current 1.4mA. +-10% tolerance.
1N4743C JGD1W zener diode. Nominal zener voltage 13V. 2% tolerance.
3EZ4.7D JGD3 W, silicon zener diode. Nominal voltage 4.7V, current 160mA, +-20% tolerance.
1N4370A JGD500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-5% tolerance.
KBPC310 JGDSingle phase 3.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000V.
3EZ150D4 JGD3 W, silicon zener diode. Nominal voltage 150 V, current 5.0 mA, +-4% tolerance.
1N4135C JGD500mW low noise silicon zener diode. Nominal zener voltage 100V. 2% tolerance.
3EZ91D3 JGD3 W, silicon zener diode. Nominal voltage 91 V, current 8.2 mA, +-3% tolerance.
HER156G JGD1.5 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 600V.
SMAJ70 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 70 V.
3EZ9.1D1 JGD3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-1% tolerance.
SMBJ17CA JGDSurface mount transient voltage suppressor. Breakdown voltage 18.9 V (min), 20.9 V (max). Test current 1.0 mA. Bidirectional.
HER107G JGD1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 800V.
1N986A JGD0.5W, silicon zener diode. Zener voltage 110V. Test current 1.1mA. +-10% tolerance.
SR760 JGDSchottky barrier rectifier (single chip). Max repetitive peak reverse voltage 60 V. Max average forward current 7.5 A.

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