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3EZ43D3 1N957A SS100 1N4752C 1N5940B SMAJ13C 1N958C KBU808 1N5536 SMBJ7.5A 1EZ120D5 SMBJ5944 SMAJ14 HER105G SMAJ120C SMBJ5929D S2M 1N5929D SMAJ28C 3EZ17D5 SMBJ5941B 1N4617 FS1M 1N4742C P6KE250C SF33G ZMM5234D

JGD 데이터 시트 카탈로그-77

부품번호제조사응용 프로그램
W005MG JGDMiniature single phase glass passivated bridge rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 1.5 A.
KBU810G JGDSingle phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 1000V.
SR104 JGDSchottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward current 1.0 A.
3EZ43D3 JGD3 W, silicon zener diode. Nominal voltage 43 V, current 17 mA, +-3% tolerance.
1N957A JGD0.5W, silicon zener diode. Zener voltage 6.8V. Test current 18.5mA. +-10% tolerance.
SS100 JGDSurface mount schottky barrier rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 1.0 A.
1N4752C JGD1W zener diode. Nominal zener voltage 33V. 2% tolerance.
1N5940B JGD1.5 W, silicon zener diode. Zener voltage 43V. Test current 8.7 mA. +-5% tolerance.
SMAJ13C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 13 V. Bidirectional.
1N958C JGD0.5W, silicon zener diode. Zener voltage 7.5V. Test current 16.5mA. +-2% tolerance.
KBU808 JGDSingle phase 8.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 800V.
1N5536 JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-20% tolerance.
SMBJ7.5A JGDSurface mount transient voltage suppressor. Breakdown voltage 8.33 V (min), 9.21 V (max). Test current 1.0 mA.
1EZ120D5 JGD1 watt silicon zener diode. Nominal zener voltage 120V at 2.0mA.
SMBJ5944 JGD1.5W silicon surface mount zener diode. Zener voltage 62 V. Test current 6.0 mA. +-20% tolerance.
SMAJ14 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 14 V.
HER105G JGD1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 400V.
SMAJ120C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 120 V. Bidirectional.
SMBJ5929D JGD1.5W silicon surface mount zener diode. Zener voltage 15 V. Test current 25.0 mA. +-1% tolerance.
S2M JGDSurface mount rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current 1.5 A.
1N5929D JGD1.5 W, silicon zener diode. Zener voltage 15V. Test current 25 mA. +-1% tolerance.
SMAJ28C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 28 V. Bidirectional.
3EZ17D5 JGD3 W, silicon zener diode. Nominal voltage 17 V, current 44 mA, +-5% tolerance.
SMBJ5941B JGD1.5W silicon surface mount zener diode. Zener voltage 47 V. Test current 8.0 mA. +-5% tolerance.
1N4617 JGD500mW low noise silicon zener diode. Nominal zener voltage 2.4V.
FS1M JGD1.0A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 1000V.
1N4742C JGD1W zener diode. Nominal zener voltage 12V. 2% tolerance.
P6KE250C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 250 V. Bidirectional.
SF33G JGDGlass passivated super fast rectifier. Max recurrent peak reverse voltage 150 V. Max average forward current 3.0 A.
ZMM5234D JGDSurface mount zener diode. Nominal zener voltage 6.2 V. Test current 20 mA. +-20% tolerance.

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