3EZ9.1D10 사양 : 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-10% tolerance.

3EZ9.1D10 유사

3EZ9.1D
- 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-20% tolerance.
3EZ9.1D1
- 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-1% tolerance.
3EZ9.1D10
- 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-10% tolerance.
3EZ9.1D10
- 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-10% tolerance.
3EZ9.1D2
- 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-2% tolerance.
3EZ9.1D4
- 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-4% tolerance.
3EZ91D
- 3 W, silicon zener diode. Nominal voltage 91 V, current 8.2 mA, +-20% tolerance.
3EZ91D1
- 3 W, silicon zener diode. Nominal voltage 91 V, current 8.2 mA, +-1% tolerance.

3EZ9.1D10 Datasheet 및 사양

제조사 : JGD

포장 :

팡 : 2

온도 : 분 -65 °C | 맥스 175 °C

파일크기 : 160 KB

응용 프로그램 : 3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-10% tolerance.