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4 SF12G 3EZ170D P6KE150A SMBJ14CA 3EZ120D4 ZMM5229C 1N984 KBP208G ZMM55-B39 FR203 1N4107C FS1A SMAJ13 FR153 SMBJ5928 1N5527C DF02G 3EZ51D2 SK14 1N5934 SR102 FR103G SMAJ100A 1N5956D KBJ601G P4KE7.5C 1N5916A

JGD 데이터 시트 카탈로그-86

부품번호제조사응용 프로그램
UF5400G JGDGlass passivated ultra fast rectifier. Max recurrent peak reverse voltage 50 V. Max average forward rectified current 3.0 A.
P4KE18 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 18 V.
P4KE24 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 24 V.
SF12G JGDGlass passivated super fast rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 1.0 A.
3EZ170D JGD3 W, silicon zener diode. Nominal voltage 170 V, current 4.4 mA, +-20% tolerance.
P6KE150A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 150 V.
SMBJ14CA JGDSurface mount transient voltage suppressor. Breakdown voltage 15.6 V (min), 17.2 V (max). Test current 1.0 mA. Bidirectional.
3EZ120D4 JGD3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, +-4% tolerance.
ZMM5229C JGDSurface mount zener diode. Nominal zener voltage 4.3 V. Test current 20 mA. +-10% tolerance.
1N984 JGD0.5W, silicon zener diode. Zener voltage 91V. Test current 1.4mA. +-20% tolerance.
KBP208G JGDSingle-phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 800V.
ZMM55-B39 JGDSurface mount zener diode, 500mW. Nominal zener voltage 37-41 V. Test current 2.5 mA. +-2% tolerance.
FR203 JGD2.0A, fast recovery rectifier. Max recurrent peak reverse voltage 200V.
1N4107C JGD500mW low noise silicon zener diode. Nominal zener voltage 13V. 2% tolerance.
FS1A JGD1.0A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 50V.
SMAJ13 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 13 V.
FR153 JGD1.5A, fast recovery rectifier. Max recurrent peak reverse voltage 200V.
SMBJ5928 JGD1.5W silicon surface mount zener diode. Zener voltage 13 V. Test current 28.8 mA. +-20% tolerance.
1N5527C JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 7.5 V. Test current 1.0 mAdc. +-2% tolerance.
DF02G JGDSingle phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 200 V.
3EZ51D2 JGD3 W, silicon zener diode. Nominal voltage 51 V, current 15 mA, +-2% tolerance.
SK14 JGDSurface mount schottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward current 1.0 A.
1N5934 JGD1.5 W, silicon zener diode. Zener voltage 24V. Test current 15.6 mA. +-20% tolerance.
SR102 JGDSchottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward current 1.0 A.
FR103G JGD1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 200V.
SMAJ100A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 100 V.
1N5956D JGD1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-1% tolerance.
KBJ601G JGDGlass passivated single-phase bridge rectifier. Current 6.0 A. Max recurrent peak reverse voltage 100V.
P4KE7.5C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 7.5 V. Bidirectional.
1N5916A JGD1.5 W, silicon zener diode. Zener voltage 4.3V. Test current 87.2 mA. +-10% tolerance.

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