경로 :okDatasheet > 반도체업체순위 > JGD Datasheet > JGD-115

BJ48A P4KE12A ZMM55-C6V2 2W04G 1N971 1N5916C KBPC1008G SMAJ13 SMBJ5942B MMBZ5249B 3EZ30D MUR140 SMBJ5920B ES1B 1N4003G 1N750C 1N4734 SMAJ26A P4KE100CA KBP200G P6KE22 KBU800 1N5937D ZMM5241A 1N5526C 3EZ17D1 SMBJ5919C SMAJ10A

JGD 데이터 시트 카탈로그-115

부품번호제조사응용 프로그램
SMAJ26CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 26 V. Bidirectional.
BZX84C33 JGD350mW zener diode, 33V
SMBJ48A JGDSurface mount transient voltage suppressor. Breakdown voltage 53.3 V (min), 58.9 V (max). Test current 1.0 mA.
P4KE12A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 12 V.
ZMM55-C6V2 JGDSurface mount zener diode, 500mW. Nominal zener voltage 5.8-6.6 V. Test current 5 mA. +-5% tolerance.
2W04G JGDSingle phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 400 V.
1N971 JGD0.5W, silicon zener diode. Zener voltage 27V. Test current 4.6mA. +-20% tolerance.
1N5916C JGD1.5 W, silicon zener diode. Zener voltage 4.3V. Test current 87.2 mA. +-2% tolerance.
KBPC1008G JGDSingle phase 10.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 800V.
SMAJ13 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 13 V.
SMBJ5942B JGD1.5W silicon surface mount zener diode. Zener voltage 51 V. Test current 7.3 mA. +-5% tolerance.
MMBZ5249B JGDSurface mount zener diode. Nominal zener voltage 19.0V, test current 6.6mA.
3EZ30D JGD3 W, silicon zener diode. Nominal voltage 30 V, current 25 mA, +-20% tolerance.
MUR140 JGD1.0A ultra fast rectifier. Max recurrent peak reverse voltage 400V.
SMBJ5920B JGD1.5W silicon surface mount zener diode. Zener voltage 6.2 V. Test current 60.5 mA. +-5% tolerance.
ES1B JGD1.0 A super fast recovery silicon rectifier. Max recurrent peak reverse voltage 100 V.
1N4003G JGD1.0A glass passivated rectifier. Max recurrent peak reverse voltage 200V.
1N750C JGD500mW, silicon zener diode. Zener voltage 4.7 V. Test current 20 mA. +-2% tolerance.
1N4734 JGD1W zener diode. Nominal zener voltage 5.6V. 10% tolerance.
SMAJ26A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 26 V.
P4KE100CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 100 V. Bidirectional.
KBP200G JGDSingle-phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50V.
P6KE22 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 22 V.
KBU800 JGDSingle phase 8.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 50V.
1N5937D JGD1.5 W, silicon zener diode. Zener voltage 33V. Test current 11.4 mA. +-1% tolerance.
ZMM5241A JGDSurface mount zener diode. Nominal zener voltage 11 V. Test current 20 mA. +-3% tolerance.
1N5526C JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 6.8 V. Test current 1.0 mAdc. +-2% tolerance.
3EZ17D1 JGD3 W, silicon zener diode. Nominal voltage 17 V, current 44 mA, +-1% tolerance.
SMBJ5919C JGD1.5W silicon surface mount zener diode. Zener voltage 5.6 V. Test current 66.9 mA. +-2% tolerance.
SMAJ10A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 10 V.

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