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99 1N5945C 1N5532A KBL408 KBPC800 SFR154 2W06G P4KE12C 1N4111 KBU1001G 1N5947A 1N4753 P6KE200A SR220 1N991 P6KE75 P4KE30 SMAJ8.5 1N987 SMBJ5.0C F1A5 SMBJ64CA P6KE12 1N5393G S3B P4KE130C 3EZ28D F1A6

JGD 데이터 시트 카탈로그-113

부품번호제조사응용 프로그램
SMAJ33A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 33 V.
P4KE160C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 160 V. Bidirectional.
BAV99 JGDSurface mount switching diode. Max forward voltage 1.00V at 50mA.
1N5945C JGD1.5 W, silicon zener diode. Zener voltage 68 V. Test current 5.5 mA. +-2% tolerance.
1N5532A JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 12.0 V. Test current 1.0 mAdc. +-10% tolerance.
KBL408 JGDSingle-phase 4.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 800V.
KBPC800 JGDSingle phase 8.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 50V.
SFR154 JGDSoft fast recovery rectifier. Max recurrent peak reverse voltage 400 V. Max average forward current 1.5 A.
2W06G JGDSingle phase 2.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 600 V.
P4KE12C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 12 V. Bidirectional.
1N4111 JGD500mW low noise silicon zener diode. Nominal zener voltage 17V.
KBU1001G JGDSingle phase 10.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 100V.
1N5947A JGD1.5 W, silicon zener diode. Zener voltage 82 V. Test current 4.6 mA. +-10% tolerance.
1N4753 JGD1W zener diode. Nominal zener voltage 36V. 10% tolerance.
P6KE200A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 200 V.
SR220 JGDSchottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward current 2.0 A.
1N991 JGD0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. +-20% tolerance.
P6KE75 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 75 V.
P4KE30 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 30 V.
SMAJ8.5 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 8.5 V.
1N987 JGD0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. +-20% tolerance.
SMBJ5.0C JGDSurface mount transient voltage suppressor. Breakdown voltage 6.40 V (min), 7.30 V (max). Test current 10.0 mA. Bidirectional.
F1A5 JGD1.0 A fast recovery rectifier. Max recurrent peak reverse voltage 600 V.
SMBJ64CA JGDSurface mount transient voltage suppressor. Breakdown voltage 71.1 V (min), 78.6 V (max). Test current 1.0 mA. Bidirectional.
P6KE12 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 12 V.
1N5393G JGD1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V.
S3B JGDSurface mount rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 3.0 A.
P4KE130C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 130 V. Bidirectional.
3EZ28D JGD3 W, silicon zener diode. Nominal voltage 28 V, current 27 mA, +-20% tolerance.
F1A6 JGD1.0 A fast recovery rectifier. Max recurrent peak reverse voltage 800 V.

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