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956A P6KE30 SMBJ5927A SF66 KBU1000G RB155G SMBJ160C P4KE220C P6KE20C 3EZ20D10 1N5528B 1N5930D ZMM55-A5V1 SMBJ5921B SMAJ17A KBPC606G SMBJ48C 3EZ15D3 P4KE82CA SMBJ18A RB151G 1N5953D 3EZ28D4 1W01 HER106L SMAJ8.0C SMAJ100C TMBD2835

JGD 데이터 시트 카탈로그-106

부품번호제조사응용 프로그램
ZMM5243D JGDSurface mount zener diode. Nominal zener voltage 13 V. Test current 9.5 mA. +-20% tolerance.
1N4732A JGD1W zener diode. Zener voltage 4.7V.
1N5956A JGD1.5 W, silicon zener diode. Zener voltage 200 V. Test current 1.9 mA. +-10% tolerance.
P6KE30 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 30 V.
SMBJ5927A JGD1.5W silicon surface mount zener diode. Zener voltage 12 V. Test current 31.2 mA. +-10% tolerance.
SF66 JGDSuper fast rectifier. Max recurrent peak reverse voltage 400 V. Max average forward current 6.0 A.
KBU1000G JGDSingle phase 10.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50V.
RB155G JGDMiniature single phase 1.5 A. Glass passivated bridge rectifier. Max recurrent peak reverse voltage 600 V.
SMBJ160C JGDSurface mount transient voltage suppressor. Breakdown voltage 178 V (min), 218 V (max). Test current 1.0 mA. Bidirectional.
P4KE220C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 220 V. Bidirectional.
P6KE20C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 20 V. Bidirectional.
3EZ20D10 JGD3 W, silicon zener diode. Nominal voltage 20 V, current 37 mA, +-10% tolerance.
1N5528B JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 8.2 V. Test current 1.0 mAdc. +-5% tolerance.
1N5930D JGD1.5 W, silicon zener diode. Zener voltage 16V. Test current 23.4 mA. +-1% tolerance.
ZMM55-A5V1 JGDSurface mount zener diode, 500mW. Nominal zener voltage 4.8-5.4 V. Test current 5 mA. +-1% tolerance.
SMBJ5921B JGD1.5W silicon surface mount zener diode. Zener voltage 6.8 V. Test current 55.1 mA. +-5% tolerance.
SMAJ17A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 17 V.
KBPC606G JGDSingle phase 6.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 600V.
SMBJ48C JGDSurface mount transient voltage suppressor. Breakdown voltage 53.3 V (min), 65.1 V (max). Test current 1.0 mA. Bidirectional.
3EZ15D3 JGD3 W, silicon zener diode. Nominal voltage 15 V, current 50 mA, +-3% tolerance.
P4KE82CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 82 V. Bidirectional.
SMBJ18A JGDSurface mount transient voltage suppressor. Breakdown voltage 20.0 V (min), 22.1 V (max). Test current 1.0 mA.
RB151G JGDMiniature single phase 1.5 A. Glass passivated bridge rectifier. Max recurrent peak reverse voltage 50 V.
1N5953D JGD1.5 W, silicon zener diode. Zener voltage 150 V. Test current 2.5 mA. +-1% tolerance.
3EZ28D4 JGD3 W, silicon zener diode. Nominal voltage 28 V, current 27 mA, +-4% tolerance.
1W01 JGDSingle phase 1.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 100 V.
HER106L JGD1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 600V.
SMAJ8.0C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 8.0 V. Bidirectional.
SMAJ100C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 100 V. Bidirectional.
TMBD2835 JGDSurface mount switching diode. Max forward voltage 1.00V at 50mA.

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