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14CA 1N5535 3EZ130D4 P6KE100C 1N5939 SMAJ51 3EZ56D1 SMAJ64CA 3EZ6.8D2 SMAJ7.0A 1N4107 1N750D P4KE68C 3EZ12D5 ZMM5226B SR504 1N4734C 1N959D 1N5522D BY297 HER606G 1N5546D 1N4754D ZMM55-C4V7 SMBJ24 1N5536C 3EZ160D3 SF62

JGD 데이터 시트 카탈로그-103

부품번호제조사응용 프로그램
SMAJ54 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 54 V.
ZMM5229D JGDSurface mount zener diode. Nominal zener voltage 4.3 V. Test current 20 mA. +-20% tolerance.
SMAJ14CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 14 V. Bidirectional.
1N5535 JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 15.0 V. Test current 1.0 mAdc. +-20% tolerance.
3EZ130D4 JGD3 W, silicon zener diode. Nominal voltage 130 V, current 5.8 mA, +-4% tolerance.
P6KE100C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 100 V. Bidirectional.
1N5939 JGD1.5 W, silicon zener diode. Zener voltage 39V. Test current 9.6 mA. +-20% tolerance.
SMAJ51 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 51 V.
3EZ56D1 JGD3 W, silicon zener diode. Nominal voltage 56 V, current 13 mA, +-1% tolerance.
SMAJ64CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 64 V. Bidirectional.
3EZ6.8D2 JGD3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-2% tolerance.
SMAJ7.0A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 7.0 V.
1N4107 JGD500mW low noise silicon zener diode. Nominal zener voltage 13V.
1N750D JGD500mW, silicon zener diode. Zener voltage 4.7 V. Test current 20 mA. +-1% tolerance.
P4KE68C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 68 V. Bidirectional.
3EZ12D5 JGD3 W, silicon zener diode. Nominal voltage 12 V, current 63 mA, +-5% tolerance.
ZMM5226B JGDSurface mount zener diode. Nominal zener voltage 3.3 V. Test current 20 mA. +-5% tolerance.
SR504 JGDSchottky barrier rectifier. Max recurrent peak reverse voltage 40 V. Max average forward current 5.0 A.
1N4734C JGD1W zener diode. Nominal zener voltage 5.6V. 2% tolerance.
1N959D JGD0.5W, silicon zener diode. Zener voltage 8.2V. Test current 15.0mA. +-1% tolerance.
1N5522D JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 4.7 V. Test current 10 mAdc. +-1% tolerance.
BY297 JGD2.0A, fast recovery rectifier. Max recurrent peak reverse voltage 200V.
HER606G JGD6.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 600V.
1N5546D JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 33.0 V. Test current 1.0 mAdc. +-1% tolerance.
1N4754D JGD1W zener diode. Nominal zener voltage 39V. 1% tolerance.
ZMM55-C4V7 JGDSurface mount zener diode, 500mW. Nominal zener voltage 4.4-5.0 V. Test current 5 mA. +-5% tolerance.
SMBJ24 JGDSurface mount transient voltage suppressor. Breakdown voltage 26.7 V (min), 32.6 V (max). Test current 1.0 mA.
1N5536C JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-2% tolerance.
3EZ160D3 JGD3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-3% tolerance.
SF62 JGDSuper fast rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 6.0 A.

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