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N5930B P6KE56 ZMM55-B6V2 SMAJ100 SMBJ6.5CA HER103G ZMM5257A 1N5534 BY251 SMAJ110CA KBPC608 HER305 P4KE12CA 1W06 1N4755 SMBJ5941C P4KE47A 1N4108D HER101L 3EZ6.8D 3EZ3.9D3 1N4624C P6KE220A 1W04 1N4747D P4KE16A P6KE110A

JGD 데이터 시트 카탈로그-105

부품번호제조사응용 프로그램
1N5518D JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-1% tolerance.
1N759D JGD500mW, silicon zener diode. Zener voltage 12.0 V. Test current 20 mA. +-1% tolerance.
S2B JGDSurface mount rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 1.5 A.
1N5930B JGD1.5 W, silicon zener diode. Zener voltage 16V. Test current 23.4 mA. +-5% tolerance.
P6KE56 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 56 V.
ZMM55-B6V2 JGDSurface mount zener diode, 500mW. Nominal zener voltage 5.8-6.6 V. Test current 5 mA. +-2% tolerance.
SMAJ100 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 100 V.
SMBJ6.5CA JGDSurface mount transient voltage suppressor. Breakdown voltage 7.22 V (min), 7.98 V (max). Test current 10.0 mA. Bidirectional.
HER103G JGD1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 200V.
ZMM5257A JGDSurface mount zener diode. Nominal zener voltage 33 V. Test current 3.8 mA. +-3% tolerance.
1N5534 JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 14.0 V. Test current 1.0 mAdc. +-20% tolerance.
BY251 JGD3.0 A silicon rectifier. Max recurrent peak reverse voltage 200 V.
SMAJ110CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 110 V. Bidirectional.
KBPC608 JGDSingle phase 6.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 800V.
HER305 JGD3.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 400V.
P4KE12CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 12 V. Bidirectional.
1W06 JGDSingle phase 1.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 600 V.
1N4755 JGD1W zener diode. Nominal zener voltage 43V. 10% tolerance.
SMBJ5941C JGD1.5W silicon surface mount zener diode. Zener voltage 47 V. Test current 8.0 mA. +-2% tolerance.
P4KE47A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 47 V.
1N4108D JGD500mW low noise silicon zener diode. Nominal zener voltage 14V. 1% tolerance.
HER101L JGD1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 50V.
3EZ6.8D JGD3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-20% tolerance.
3EZ3.9D3 JGD3 W, silicon zener diode. Nominal voltage 3.9V, current 192mA, +-3% tolerance.
1N4624C JGD500mW low noise silicon zener diode. Nominal zener voltage 4.7V. 2% tolerance.
P6KE220A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 220 V.
1W04 JGDSingle phase 1.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 400 V.
1N4747D JGD1W zener diode. Nominal zener voltage 20V. 1% tolerance.
P4KE16A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 16 V.
P6KE110A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 110 V.

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