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3EZ51D5 SMAJ24 SMAJ54A 1A6G F1A3 HER204 P4KE200CA MR856 ZMM55-A6V2 SMBJ5950A IN4942 3EZ68D5 DF01G SMAJ8.0A SMBJ54CA 1N4103D 1N964D 1N962B 3EZ51D4 HER302G SMAJ45C 3EZ6.8D4 P4KE56 SMBJ120C ZMM5253A ZMM5251C 1N5538C

JGD 데이터 시트 카탈로그-111

부품번호제조사응용 프로그램
SF13 JGDSuper fast rectifier. Max recurrent peak reverse voltage 150 V. Max average forward current 1.0 A.
UF4007 JGDUltra fast rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current 1.0 A.
SMAJ22C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 22 V. Bidirectional.
3EZ51D5 JGD3 W, silicon zener diode. Nominal voltage 51 V, current 15 mA, +-5% tolerance.
SMAJ24 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 24 V.
SMAJ54A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 54 V.
1A6G JGD1.0A glass passivated rectifier. Max recurrent peak reverse voltage 800V.
F1A3 JGD1.0 A fast recovery rectifier. Max recurrent peak reverse voltage 200 V.
HER204 JGD2.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 300V.
P4KE200CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 200 V. Bidirectional.
MR856 JGD3.0A, fast recovery rectifier. Max recurrent peak reverse voltage 600V.
ZMM55-A6V2 JGDSurface mount zener diode, 500mW. Nominal zener voltage 5.8-6.6 V. Test current 5 mA. +-1% tolerance.
SMBJ5950A JGD1.5W silicon surface mount zener diode. Zener voltage 110 V. Test current 3.4 mA. +-10% tolerance.
IN4942 JGD1.0A, fast recovery rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V.
3EZ68D5 JGD3 W, silicon zener diode. Nominal voltage 68 V, current 11 mA, +-5% tolerance.
DF01G JGDSingle phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 100 V.
SMAJ8.0A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 8.0 V.
SMBJ54CA JGDSurface mount transient voltage suppressor. Breakdown voltage 60.0 V (min), 66.3 V (max). Test current 1.0 mA. Bidirectional.
1N4103D JGD500mW low noise silicon zener diode. Nominal zener voltage 9.1V. 1% tolerance.
1N964D JGD0.5W, silicon zener diode. Zener voltage 13V. Test current 9.5mA. +-1% tolerance.
1N962B JGD0.5W, silicon zener diode. Zener voltage 11V. Test current 11.5mA. +-5% tolerance.
3EZ51D4 JGD3 W, silicon zener diode. Nominal voltage 51 V, current 15 mA, +-4% tolerance.
HER302G JGD3.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 100V.
SMAJ45C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 45 V. Bidirectional.
3EZ6.8D4 JGD3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-4% tolerance.
P4KE56 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 56 V.
SMBJ120C JGDSurface mount transient voltage suppressor. Breakdown voltage 133 V (min), 163 V (max). Test current 1.0 mA. Bidirectional.
ZMM5253A JGDSurface mount zener diode. Nominal zener voltage 25 V. Test current 5.0 mA. +-3% tolerance.
ZMM5251C JGDSurface mount zener diode. Nominal zener voltage 22 V. Test current 5.6 mA. +-10% tolerance.
1N5538C JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. +-2% tolerance.

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