BUT11AF 유사

BUT11
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
BUT11
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
BUT11A
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
BUT11AF
- NPN silicon diffused power transistor. For switching power circuits
BUT12
- NPN silicon diffused power transistor. For switching power circuits
BUT12A
- NPN silicon diffused power transistor. For switching power circuits
BUT12AF
- NPN silicon diffused power transistor. For switching power circuits

BUT11AF Datasheet 및 사양

제조사 : WingShing

포장 : TO-220F

팡 : 3

온도 : 분 0 °C | 맥스 0 °C

파일크기 : 76 KB

응용 프로그램 : NPN silicon diffused power transistor. For switching power circuits