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BUT11A 사양 : NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
BUT11A 유사
- BUT11
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
- BUT11
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
- BUT11A
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
- BUT11AF
- NPN silicon diffused power transistor. For switching power circuits
- BUT12
- NPN silicon diffused power transistor. For switching power circuits
- BUT12A
- NPN silicon diffused power transistor. For switching power circuits
- BUT12AF
- NPN silicon diffused power transistor. For switching power circuits
BUT11A Datasheet 및 사양
제조사 : WingShing
포장 : TO-220
팡 : 3
온도 : 분 0 °C | 맥스 0 °C
파일크기 : 24 KB
응용 프로그램 : NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
다운로드를 BUT11A