UT7Q512K-UCX 사양 : 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish factory option.

UT7Q512K-UCX 유사

UT7Q512
- 512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.
UT7Q512
- 512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.
UT7Q512K-UCA
- "512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish hot solder dipped."
UT7Q512K-UCA
- 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish hot solder dipped.
UT7Q512K-UCC
- 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish gold.
UT7Q512K-UCX
- 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish factory option.
UT7Q512K-UPC
- 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish gold.
UT7Q512K-UPC
- 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish gold.

UT7Q512K-UCX Datasheet 및 사양

제조사 : UTMC

포장 : Ceramic flatpack

팡 : 32

온도 : 분 -55 °C | 맥스 125 °C

파일크기 : 117 KB

응용 프로그램 : 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish factory option.