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UT7Q512 사양 : 512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.
UT7Q512 유사
- UT7Q512
- 512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.
- UT7Q512
- 512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.
- UT7Q512K-UCA
- "512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish hot solder dipped."
- UT7Q512K-UCA
- 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish hot solder dipped.
- UT7Q512K-UCC
- 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish gold.
- UT7Q512K-UCX
- 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish factory option.
- UT7Q512K-UPC
- 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish gold.
- UT7Q512K-UPC
- 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish gold.
UT7Q512 Datasheet 및 사양
제조사 : UTMC
포장 : FlatPack
팡 : 32
온도 : 분 0 °C | 맥스 0 °C
파일크기 : 16 KB
응용 프로그램 : 512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.
다운로드를 UT7Q512