BUZ907 사양 : P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V.

BUZ907 유사

BUZ903P
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
BUZ906D
- P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
BUZ902D
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ908
- P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V.
BUZ902
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ901X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
BUZ902
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ900X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.

BUZ907 Datasheet 및 사양

제조사 : Magnatec

포장 : TO-3

팡 : 2

온도 : 분 0 °C | 맥스 150 °C

파일크기 : 27 KB

응용 프로그램 : P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V.