BUZ900X4S 사양 : N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.

BUZ900X4S 유사

BUZ903P
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
BUZ906D
- P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
BUZ902D
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ908
- P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V.
BUZ902
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ901X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
BUZ902
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ900X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.

BUZ900X4S Datasheet 및 사양

제조사 : Magnatec

포장 : SOT227

팡 : 4

온도 : 분 0 °C | 맥스 150 °C

파일크기 : 36 KB

응용 프로그램 : N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.