HLB125E 사양 : Emitter to base voltage9V; NPN epitaxial planar transistor for light applications and low switch-mode power suppies

HLB125E 유사

HLB120A
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
HLB121I
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
HLB122I
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
HLB122J
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
HLB123I
- Emitter to base voltage8V; NPN epitaxial planar transistor
HLB123T
- Emitter to base voltage8V; NPN epitaxial planar transistor
HLB124E
- Emitter to base voltage8V; NPN epitaxial planar transistor for high voltage, high speed switching inductive circuit and amplifier applications
HLB125E
- Emitter to base voltage9V; NPN epitaxial planar transistor for light applications and low switch-mode power suppies

HLB125E Datasheet 및 사양

포장 : TO-220

팡 : 3

온도 : 분 0 °C | 맥스 0 °C

파일크기 : 42 KB

응용 프로그램 : Emitter to base voltage9V; NPN epitaxial planar transistor for light applications and low switch-mode power suppies