경로 :OKDatasheet > 반도체업체순위 > Hi Sincerity Datasheet > HLB124E
HLB124E 사양 : Emitter to base voltage8V; NPN epitaxial planar transistor for high voltage, high speed switching inductive circuit and amplifier applications
HLB124E 유사
- HLB120A
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
- HLB121I
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
- HLB122I
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
- HLB122J
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
- HLB123I
- Emitter to base voltage8V; NPN epitaxial planar transistor
- HLB123T
- Emitter to base voltage8V; NPN epitaxial planar transistor
- HLB124E
- Emitter to base voltage8V; NPN epitaxial planar transistor for high voltage, high speed switching inductive circuit and amplifier applications
- HLB125E
- Emitter to base voltage9V; NPN epitaxial planar transistor for light applications and low switch-mode power suppies
HLB124E Datasheet 및 사양
제조사 : Hi Sincerity
포장 : TO-220
팡 : 3
온도 : 분 0 °C | 맥스 0 °C
파일크기 : 40 KB
응용 프로그램 : Emitter to base voltage8V; NPN epitaxial planar transistor for high voltage, high speed switching inductive circuit and amplifier applications
다운로드를 HLB124E