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BU406D 유사

  • BU406
    • NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V.
  • BU406D
    • NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 400V. Emitter-base voltage 6V.
  • BU406H
    • NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V.
  • BU407
    • Silicon epitaxial planar transistor. High frequency, high power transistor for audio and general purpose.
  • BU408
    • NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V.

BU406D Datasheet 및 사양

제조사 : WingShing 

포장 : TO-220 

팡 : 3 

온도 : 분 0 °C | 맥스 0 °C

파일크기 : 24 KB

응용 프로그램 : NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 400V. Emitter-base voltage 6V. 

다운로드를 BU406D