BDX53C 사양 : NPN epitaxial silicon transistor. Collector-base voltage 100V. Collector-emitter voltage 100V. Emitter-base voltage 5V

BDX53C 유사

BDX53
- NPN epitaxial silicon transistor. Collector-base voltage 45V. Collector-emitter voltage 45V. Emitter-base voltage 5V
BDX53A
- NPN epitaxial silicon transistor. Collector-base voltage 60V. Collector-emitter voltage 60V. Emitter-base voltage 5V
BDX53B
- NPN epitaxial silicon transistor. Collector-base voltage 80V. Collector-emitter voltage 80V. Emitter-base voltage 5V
BDX53C
- NPN epitaxial silicon transistor. Collector-base voltage 100V. Collector-emitter voltage 100V. Emitter-base voltage 5V
BDX54
- PNP epitaxial silicon transistor. Collector-base voltage -45V. Collector-emitter voltage -45V. Emitter-base voltage -5V
BDX54A
- PNP epitaxial silicon transistor. Collector-base voltage -60V. Collector-emitter voltage -60V. Emitter-base voltage -5V
BDX54B
- PNP epitaxial silicon transistor. Collector-base voltage -80V. Collector-emitter voltage -80V. Emitter-base voltage -5V
BDX54B
- PNP epitaxial silicon transistor. Collector-base voltage -80V. Collector-emitter voltage -80V. Emitter-base voltage -5V

BDX53C Datasheet 및 사양

제조사 : WingShing

포장 : TO-220

팡 : 3

온도 : 분 0 °C | 맥스 0 °C

파일크기 : 23 KB

응용 프로그램 : NPN epitaxial silicon transistor. Collector-base voltage 100V. Collector-emitter voltage 100V. Emitter-base voltage 5V