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TIP35C 사양 : NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W.
TIP35C 유사
- TIP32C
- PNP, silicon plastic power transistor. Designed for use in general-purpose switching and amplifier application. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 3Adc, PD = 40W.
- TIP35C
- NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W.
- TIP36A
- PNP, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W.
- TIP36B
- PNP, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W.
- TIP36C
- PNP, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W.
TIP35C Datasheet 및 사양
제조사 : Usha
포장 : TO-218
팡 : 3
온도 : 분 -65 °C | 맥스 150 °C
파일크기 : 51 KB
응용 프로그램 : NPN, silicon high-power transistor. Designed for use in general-purpose switching and power amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 25Adc, PD = 125W.
다운로드를 TIP35C