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MJE3055T 사양 : NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W.
MJE3055T 유사
- MJE3055T
- NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W.
MJE3055T Datasheet 및 사양
제조사 : Usha
포장 : TO-220
팡 : 3
온도 : 분 -65 °C | 맥스 150 °C
파일크기 : 52 KB
응용 프로그램 : NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W.
다운로드를 MJE3055T