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2N6519 사양 : High voltage transistor. Collector-emitter voltage Vceo = -300V. Collector-base voltage Vcbo = -300V. Collector dissipation Pc(max) = 0.625W.
2N6519 유사
- 2N6515
- High voltage transistor. Collector-emitter voltage Vceo = 250V. Collector-base voltage Vcbo = 250V. Collector dissipation Pc(max) = 625mW.
- 2N6516
- High voltage transistor. Collector-emitter voltage Vceo = 250V. Collector-base voltage Vcbo = 250V. Collector dissipation Pc(max) = 625mW.
- 2N6517
- High voltage transistor. Collector-emitter voltage Vceo = 350V. Collector-base voltage Vcbo = 350V. Collector dissipation Pc(max) = 625mW.
- 2N6518
- High voltage transistor. Collector-emitter voltage Vceo = -250V. Collector-base voltage Vcbo = -250V. Collector dissipation Pc(max) = 0.625W.
- 2N6519
- High voltage transistor. Collector-emitter voltage Vceo = -300V. Collector-base voltage Vcbo = -300V. Collector dissipation Pc(max) = 0.625W.
2N6519 Datasheet 및 사양
제조사 : Usha
포장 :
팡 : 3
온도 : 분 0 °C | 맥스 150 °C
파일크기 : 54 KB
응용 프로그램 : High voltage transistor. Collector-emitter voltage Vceo = -300V. Collector-base voltage Vcbo = -300V. Collector dissipation Pc(max) = 0.625W.
다운로드를 2N6519