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2N4123 사양 : General purpose transistor. Collector-emitter voltage Vceo = 30V. Collector-base voltage Vcbo = 40V. Collector dissipation Pc(max) = 625mW.
2N4123 유사
- 2N4123
- General purpose transistor. Collector-emitter voltage Vceo = 30V. Collector-base voltage Vcbo = 40V. Collector dissipation Pc(max) = 625mW.
- 2N4124
- General purpose transistor. Collector-emitter voltage Vceo = 25V. Collector-base voltage Vcbo = 30V. Collector dissipation Pc(max) = 625mW.
- 2N4125
- Amplifier transistor. Collector-emitter voltage Vceo = -30V. Collector-base voltage Vcbo = -30V. Collector dissipation Pc(max) = 625mW.
- 2N4126
- Amplifier transistor. Collector-emitter voltage Vceo = -25V. Collector-base voltage Vcbo = -25V. Collector dissipation Pc(max) = 625mW.
2N4123 Datasheet 및 사양
제조사 : Usha
포장 :
팡 : 3
온도 : 분 0 °C | 맥스 150 °C
파일크기 : 49 KB
응용 프로그램 : General purpose transistor. Collector-emitter voltage Vceo = 30V. Collector-base voltage Vcbo = 40V. Collector dissipation Pc(max) = 625mW.
다운로드를 2N4123