5962P0053601TXX 사양 : 512K x 8 SRAM MCM SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)).

5962P0053601TXX 유사

5962-9652801VCX
- RadHard MSI SMD. Triple 3-input NOR gates. Class V, QML. Lead finish optional. Total dose none.
5962-9652701QXA
- "RadHard MSI SMD. Dual 4-input NAND gates. Class Q, QML. Lead finish solder. Total dose none."
5962-9658101QXC
- "RadHard MSI SMD. Quadruple S-R latches. Class Q, QML. Lead finish gold. Total dose none."
5962R9855202QXX
- RadHard microcontroller SMD. 16 MHz operating frequency. Class Q. Lead finish optional. Total dose 1E5 rads(Si).
5962R9322603QZA
- "Monolithic transceiver, 5V operation SMD. Device type idle low. Class Q. Lead finish solder. Total dose 1E5 rads(Si)."
5962R9659401VRC
- "RadHard MSI SMD. Octal driver, w/three-state outputs. Class V, QML. Lead finish gold. Total dose 1E5 rads(Si)."
5962F9322604VZX
- "Monolithic transceiver, 5V operation SMD. Device type 1760, idle low. Class V. Lead finish optional. Total dose 3E5 rads(Si)."
5962R9652301VCX
- "RadHard MSI SMD. Triple 3-input AND gates. Class V, QML. Lead finish optional. Total dose 1E5 rads(Si)."

5962P0053601TXX Datasheet 및 사양

제조사 : UTMC

포장 : Flatpack shielded

팡 : 36

온도 : 분 -55 °C | 맥스 125 °C

파일크기 : 140 KB

응용 프로그램 : 512K x 8 SRAM MCM SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)).