경로 :OKDatasheet > 반도체업체순위 > Turbo IC Datasheet
키워드 : Turbo IC Datasheet, Turbo IC Data Sheet, Turbo IC 데이터 시트, Turbo IC Inc
경로 :OKDatasheet > 반도체업체순위 > Turbo IC Datasheet
키워드 : Turbo IC Datasheet, Turbo IC Data Sheet, Turbo IC 데이터 시트, Turbo IC Inc
구체적인 Turbo IC Inc 데이터 시트를 찾으려면, 찾기 okdatasheet 부품 번호 또는 구성 요소를 설명합니다. 당신과 함께 수여됩니다 Turbo IC 부품과 일치하는 모든 데이터 시트의 목록을합니다. 클릭하면 전자 구성 요소를 나열 사양을 포함하여 자세한 내용을합니다.
Turbo IC 공식 웹사이트
부품번호 | 응용 프로그램 |
---|---|
28LV256JI-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28LV64SC-4 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. |
28C256APC-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
TU25C256PI | CMOS SPI bus. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Voltage 4.5V to 5.5V. |
TU25C128PC-2.7 | CMOS SPI bus. 128K electrically erasable programmable ROM. 16K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
28C64ATM-4 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. |
28C256ASC-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
29C010JI-3 | High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns. |
28LV64TI-3 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. |
28LV64JI-4 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. |
TU24C32CP3 | CMOS IIC 2-wire bus. 32K electrically erasable programmable ROM. 4K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
28C64API-2 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. |
28C256ATI-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
28C64ASM-4 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. |
28C64AJI-3 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. |
28C256ATI-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28C256AJC-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
28C64ASC-4 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. |
28C64ATM-3 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. |
28LV256TI-5 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
28LV64SI-6 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. |
28LV64PM-5 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns. |
28C64AJC-2 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. |
TU24C128CS3 | CMOS IIC 2-wire bus. 128K electrically erasable programmable ROM. 16K x 8 bit EEPROM. Voltage 2.7V to 5.5V. |
28C256AJC-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
28LV64JC-4 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. |
28C64ATI-4 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. |
28LV256PM-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC Inc