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TC1030EPD 사양 : Linear building block - quad low power operational amplifier.
TC1030EPD 유사
- TC1014-2.5VCT
- 50mA CMOS LDO with shutdown and reference bypass. Output voltage 2.5V.
- TC1014-2.7VCT
- 50mA CMOS LDO with shutdown and reference bypass. Output voltage 2.7V.
- TC1014-3.0VCT
- 50mA CMOS LDO with shutdown and reference bypass. Output voltage 3.0V.
- TC1014-3.3VCT
- 50mA CMOS LDO with shutdown and reference bypass. Output voltage 3.3V.
- TC1014-5.0VCT
- 50mA CMOS LDO with shutdown and reference bypass. Output voltage 5.0V.
- TC1015-2.5VCT
- 100mA CMOS LDO with shutdown and reference bypass. Output voltage 2.5V.
- TC1015-2.7VCT
- 100mA CMOS LDO with shutdown and reference bypass. Output voltage 2.7V.
- TC1015-3.0VCT
- 100mA CMOS LDO with shutdown and reference bypass. Output voltage 3.0 V.
TC1030EPD Datasheet 및 사양
제조사 : TelCom Semiconductor
포장 : Plastic DIP
팡 : 14
온도 : 분 -40 °C | 맥스 85 °C
파일크기 : 29 KB
응용 프로그램 : Linear building block - quad low power operational amplifier.
다운로드를 TC1030EPD