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TC1030EOD 유사

  • TC1014-2.5VCT
    • 50mA CMOS LDO with shutdown and reference bypass. Output voltage 2.5V.
  • TC1014-2.7VCT
    • 50mA CMOS LDO with shutdown and reference bypass. Output voltage 2.7V.
  • TC1014-3.0VCT
    • 50mA CMOS LDO with shutdown and reference bypass. Output voltage 3.0V.
  • TC1014-3.3VCT
    • 50mA CMOS LDO with shutdown and reference bypass. Output voltage 3.3V.
  • TC1014-5.0VCT
    • 50mA CMOS LDO with shutdown and reference bypass. Output voltage 5.0V.
  • TC1015-2.5VCT
    • 100mA CMOS LDO with shutdown and reference bypass. Output voltage 2.5V.
  • TC1015-2.7VCT
    • 100mA CMOS LDO with shutdown and reference bypass. Output voltage 2.7V.
  • TC1015-3.0VCT
    • 100mA CMOS LDO with shutdown and reference bypass. Output voltage 3.0 V.

TC1030EOD Datasheet 및 사양

제조사 : TelCom Semiconductor 

포장 : SOIC 

팡 : 14 

온도 : 분 -40 °C | 맥스 85 °C

파일크기 : 29 KB

응용 프로그램 : Linear building block - quad low power operational amplifier. 

다운로드를 TC1030EOD