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RC30S10G 사양 : Silicon GPP cell rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward current 30 A.
RC30S10G 유사
- RC30S01G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 30 A.
- RC30S02
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 30 A.
- RC30S02G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 30 A.
- RC30S04
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 30 A.
- RC30S04G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 30 A.
- RC30S06
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 30 A.
- RC30S06G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 30 A.
- RC30S06G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 30 A.
RC30S10G Datasheet 및 사양
제조사 : Shanghai Sunrise
포장 :
팡 : 0
온도 : 분 -50 °C | 맥스 150 °C
파일크기 : 18 KB
응용 프로그램 : Silicon GPP cell rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward current 30 A.
다운로드를 RC30S10G