STH6NA80FI 유사

STH60N10
- Power dissipation 200 W Transistor polarity N Channel Current Id cont. 60 A Current Idm pulse 240 A Pitch lead 5.45 mm Voltage Vds max 100 V Resistance Rds on 0.025 R Temperature current 25 ?C
STH60N10FI
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH6N100
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH6N100FI
- N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STH6NA80FI
- N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS

STH6NA80FI Datasheet 및 사양

포장 :

팡 : 0

온도 : 분 0 °C | 맥스 0 °C

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응용 프로그램 : N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS