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MJD127-1 사양 : PNP darlington transistor for high DC current gain, 100V, 5A
MJD127-1 유사
- MJD112
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD117
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122-1
- "NPN darlington transistor for high DC current gain, 100V, 5A"
- MJD122T4
- NPN darlington transistor for high DC current gain, 100V, 5A
- MJD127-1
- PNP darlington transistor for high DC current gain, 100V, 5A
- MJD127T4
- PNP darlington transistor for high DC current gain, 100V, 5A
MJD127-1 Datasheet 및 사양
제조사 : ST Microelectronics
포장 : TO-251
팡 : 3
온도 : 분 -65 °C | 맥스 150 °C
파일크기 : 100 KB
응용 프로그램 : PNP darlington transistor for high DC current gain, 100V, 5A
다운로드를 MJD127-1