2SK1961 사양 : N-channel junction silicon FET, high-frequency low-noise amp application

2SK1961 유사

2SK1052
- N-channel MOS silicon FET, very high-speed switching application
2SK1065
- N-channel junction silicon FET, high-frequency general-purpose amp application
2SK1066
- N-channel junction silicon FET, high-frequency general-purpose amp application
2SK1067
- "N-channel MOS silicon FET, FM tuner, VHF-band amp application"
2SK1068
- N-channel junction silicon FET, impedance conversion application
2SK1069
- N-channel junction silicon FET, low-frequency general-purpose amp application
2SK1332
- N-channel junction silicon FET, low-frequency general-purpose amp application
2SK1413
- N-channel MOS silicon FET, high-voltage, high-speed switching application

2SK1961 Datasheet 및 사양

제조사 : SANYO

포장 : 2019A

팡 : 3

온도 : 분 0 °C | 맥스 0 °C

파일크기 : 140 KB

응용 프로그램 : N-channel junction silicon FET, high-frequency low-noise amp application