2SC3651 사양 : NPN epitaxial planar silicon transistor, high h(FE), low-frequency general-purpose amp application

2SC3651 유사

2SC3000
- NPN epitaxial planar silicon transistor, HF amp application
2SC3038
- NPN triple diffused planar silicon transistor, for switching regulator
2SC3039
- NPN triple diffused planar silicon transistor, for switching regulator
2SC3042
- NPN triple diffused planar silicon transistor, for switching regulator
2SC3068
- NPN transistor for low-frequency general-purpose amplifier applications
2SC3069
- NPN epitaxial planar silicon transistor, high h(FE), low-frequency general-purpose amp application
2SC3070
- NPN epitaxial planar silicon transistor, high h(FE), low-frequency general-purpose amp application
2SC3071
- NPN transistor, high hFE, low-frequency general-purpose amplifier applications

2SC3651 Datasheet 및 사양

제조사 : SANYO

포장 : 2038

팡 : 3

온도 : 분 0 °C | 맥스 0 °C

파일크기 : 91 KB

응용 프로그램 : NPN epitaxial planar silicon transistor, high h(FE), low-frequency general-purpose amp application