F2247 사양 : 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2247 유사

F2246
- 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2247
- 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2248
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2247 Datasheet 및 사양

제조사 : Polyfet RF

포장 :

팡 : 6

온도 : 분 -65 °C | 맥스 150 °C

파일크기 : 36 KB

응용 프로그램 : 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor