F2001 사양 : 2.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2001 유사

F2001
- 2.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2002
- 5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2004
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2001 Datasheet 및 사양

제조사 : Polyfet RF

포장 :

팡 : 2

온도 : 분 -65 °C | 맥스 150 °C

파일크기 : 40 KB

응용 프로그램 : 2.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor