F1221 사양 : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1221 유사

F1220
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1221
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1222
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1221 Datasheet 및 사양

제조사 : Polyfet RF

포장 :

팡 : 2

온도 : 분 -65 °C | 맥스 150 °C

파일크기 : 40 KB

응용 프로그램 : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor