F1206 사양 : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1206 유사

F1206
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1207
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1208
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1209
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1206 Datasheet 및 사양

제조사 : Polyfet RF

포장 :

팡 : 2

온도 : 분 -65 °C | 맥스 150 °C

파일크기 : 39 KB

응용 프로그램 : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor