F1076 유사

  • F1070
    • 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1072
    • 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1074
    • 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1076
    • 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1076
    • 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F1077
    • 125 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1076 Datasheet 및 사양

제조사 : Polyfet RF 

포장 :  

팡 : 4 

온도 : 분 -65 °C | 맥스 150 °C

파일크기 : 41 KB

응용 프로그램 : 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

다운로드를 F1076