F1060 사양 : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1060 유사

F1060
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1063
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1065
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1066
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1069
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1060 Datasheet 및 사양

제조사 : Polyfet RF

포장 :

팡 : 2

온도 : 분 -65 °C | 맥스 150 °C

파일크기 : 41 KB

응용 프로그램 : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor